Scalability of memristor-type devices based on TiO₂ nanotubes: proof of concept for applications in non-volatile memories

Abstract

The presentation scalability of memristor-type devices based on tio₂ nanotubes: proof of concept for applications in non-volatile memories” analyzed recent advances in the development of memristive devices as emerging technologies in the field of nanoelectronics. In a landscape marked by the need for faster, more efficient, and low-power storage systems, memristors appear as a promising alternative to overcome the limitations of traditional memory technologies. The talk focused on the use of titanium dioxide (TiO₂) nanotubes as the base material, highlighting their electrical properties, stability, and ability to enable resistive switching processes essential for the functionality of these devices.

One of the main topics of the presentation was the study of scalability, a determining factor for the technological viability of memristors in real-world applications. The speaker showed how structuring TiO₂ into nanotube form enhances integration density, optimizes electrical response, and supports the reproducibility of write–erase processes in non-volatile memories. The physical mechanisms involved in resistance switching were also addressed, analyzing oxygen vacancy migration and the behavior of active layers under different operation cycles.

Additionally, the presentation emphasized the importance of establishing proof-of-concept tests to evaluate device performance at different scales, considering parameters such as durability, switching speed, and temporal stability. The experimental challenges associated with the fabrication and characterization of memristive systems based on nanotubes were also discussed, along with the challenges for their integration into modern electronic architectures